Infrared crystal-合肥合瑞达光电材料有限公司

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Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.

	Physical Properties of Sapphire
Crystal Structure	Hexagonal. a =4.758 Å c= 12.992 Å
Crystallographic D spacing	(1120 ) - a plane: 2.379 Å (1102) - r plane: 1.740 Å (1010) - m plane: 1.375 Å (1123) - n plane: 1.147 Å¯ (0001) - c plane: 2.165 Å (1011) - s plane: 1.961 Å
Crystal Purity	> 99.99%
Melt Point	2040 ^oC
Density	3.98 g/cm³
Hardness	9 ( mohs)
Thermal Expansion	7.5 (x10^-6/ ^oC)
Specific Heat	0.10 ( cal /^oC)
Thermal Conductivity,	46.06 @ 0 ^oC 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) )
Dielectric Constant	~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz	< 2x10^-5 at A axis , <5 x10^-5 at C axis
Standard Products
As - grown boules <0001> ori.± 0.5^o	3" dia x 50 ~ 70 mm length 2" dia x 50 ~ 70 mm length 30 mm dia x 150 mm length
As-cut blanks <0001> ori.± 0.5^o	2" dia x 0.7 mm thickness 1" dia x 0.7 mm thickness
Epi -polished substrates C, R, A plane: ori.± 0.5^o 1 or 2 sides polished Ra< 10 Å	3" dia. x 0.5 mm 2" dia. x 0.33 mm, 2"dia x 0.5 mm 1" dia x 0.5 mm 0.5" x 0.5" x 0.5 mm 10x10x0.5 mm